IndiumV3, Main, Repository, bibRecord, 005592

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

Identifieur interne : 005592 ( Main/Repository ); précédent : 005591; suivant : 005593

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

Auteurs : RBID : Pascal:10-0071670

Descripteurs français

Pascal (Inist)
- Propriété électronique, Propriété électrique, Passivation, Onde déformation, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Photodiode, Nitrure de silicium, Nitrure de zinc, Semiconducteur II-VI, Traitement surface, Superréseau contraint, Couche contrainte, Antimoniure de gallium, Oxyde de silicium, Sulfure de zinc, Détecteur, Diode, Conductivité superficielle, InAs, GaSb, SiO2, ZnS, 8560D.

English descriptors

KwdEn :
- Detector, Diode, Electrical properties, Electronic properties, Gallium antimonides, II-VI semiconductors, III-V compound, III-V semiconductors, Indium arsenides, Passivation, Photodiode, Silicon nitride, Silicon oxides, Strain wave, Strained layer, Strained superlattice, Surface conductivity, Surface treatment, Zinc nitride, Zinc sulfide.

Abstract

Silicon dioxide (SiO₂), silicon nitride (Si_xN_y), and zinc sulfide (ZnS) with ammonium sulfide [(NH₄)₂S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ˜10 μm. SiO₂ did not show significant improvement and the zero-bias resistance-area product (R_oA) was 0.72 Ω-cm² at 77 K. Si_xN_y passivation showed a nominal improvement with an R_oA value of 4.1 Ω-cm² at 77 K. ZnS with (NH₄)₂S treatment outperformed others significantly, improving the R_oA value to 492 Ω-cm² at 77 K. Variable-area diode measurements indicated a bulk-limited R_oA value of 722 Ω-cm². ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm.

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Le document en format XML

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<author><name sortKey="Banerjee, Koushik" uniqKey="Banerjee K">Koushik Banerjee</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street</s1>
<s2>Chicago, IL 60607</s2>
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<author><name sortKey="Ghosh, Siddhartha" uniqKey="Ghosh S">Siddhartha Ghosh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street</s1>
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<author><name sortKey="Mallick, Shubhrangshu" uniqKey="Mallick S">Shubhrangshu Mallick</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EPIR Technologies, Inc., 590 Territorial Drive, Unit B</s1>
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<author><name sortKey="Plis, Elena" uniqKey="Plis E">Elena Plis</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710</s1>
<s2>Albuquerque, NM 87106</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
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<country>États-Unis</country>
<placeName><region type="state">État du Mississippi</region>
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<author><name sortKey="Krishna, Sanjay" uniqKey="Krishna S">Sanjay Krishna</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710</s1>
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<s3>USA</s3>
<sZ>4 aut.</sZ>
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<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Detector</term>
<term>Diode</term>
<term>Electrical properties</term>
<term>Electronic properties</term>
<term>Gallium antimonides</term>
<term>II-VI semiconductors</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Passivation</term>
<term>Photodiode</term>
<term>Silicon nitride</term>
<term>Silicon oxides</term>
<term>Strain wave</term>
<term>Strained layer</term>
<term>Strained superlattice</term>
<term>Surface conductivity</term>
<term>Surface treatment</term>
<term>Zinc nitride</term>
<term>Zinc sulfide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électronique</term>
<term>Propriété électrique</term>
<term>Passivation</term>
<term>Onde déformation</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Photodiode</term>
<term>Nitrure de silicium</term>
<term>Nitrure de zinc</term>
<term>Semiconducteur II-VI</term>
<term>Traitement surface</term>
<term>Superréseau contraint</term>
<term>Couche contrainte</term>
<term>Antimoniure de gallium</term>
<term>Oxyde de silicium</term>
<term>Sulfure de zinc</term>
<term>Détecteur</term>
<term>Diode</term>
<term>Conductivité superficielle</term>
<term>InAs</term>
<term>GaSb</term>
<term>SiO2</term>
<term>ZnS</term>
<term>8560D</term>
</keywords>
</textClass>
</profileDesc>
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<front><div type="abstract" xml:lang="en">Silicon dioxide (SiO<sub>2</sub>
), silicon nitride (Si<sub>x</sub>
N<sub>y</sub>
), and zinc sulfide (ZnS) with ammonium sulfide [(NH<sub>4</sub>
)<sub>2</sub>
S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ˜10 μm. SiO<sub>2</sub>
 did not show significant improvement and the zero-bias resistance-area product (R<sub>o</sub>
A) was 0.72 Ω-cm<sup>2</sup>
 at 77 K. Si<sub>x</sub>
N<sub>y</sub>
 passivation showed a nominal improvement with an R<sub>o</sub>
A value of 4.1 Ω-cm<sup>2</sup>
 at 77 K. ZnS with (NH<sub>4</sub>
)<sub>2</sub>
S treatment outperformed others significantly, improving the R<sub>o</sub>
A value to 492 Ω-cm<sup>2</sup>
 at 77 K. Variable-area diode measurements indicated a bulk-limited R<sub>o</sub>
A value of 722 Ω-cm<sup>2</sup>
. ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm.</div>
</front>
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<fA11 i1="03" i2="1"><s1>MALLICK (Shubhrangshu)</s1>
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<fA11 i1="05" i2="1"><s1>KRISHNA (Sanjay)</s1>
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<sZ>3 aut.</sZ>
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<s2>Albuquerque, NM 87106</s2>
<s3>USA</s3>
<sZ>4 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Silicon dioxide (SiO<sub>2</sub>
), silicon nitride (Si<sub>x</sub>
N<sub>y</sub>
), and zinc sulfide (ZnS) with ammonium sulfide [(NH<sub>4</sub>
)<sub>2</sub>
S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ˜10 μm. SiO<sub>2</sub>
 did not show significant improvement and the zero-bias resistance-area product (R<sub>o</sub>
A) was 0.72 Ω-cm<sup>2</sup>
 at 77 K. Si<sub>x</sub>
N<sub>y</sub>
 passivation showed a nominal improvement with an R<sub>o</sub>
A value of 4.1 Ω-cm<sup>2</sup>
 at 77 K. ZnS with (NH<sub>4</sub>
)<sub>2</sub>
S treatment outperformed others significantly, improving the R<sub>o</sub>
A value to 492 Ω-cm<sup>2</sup>
 at 77 K. Variable-area diode measurements indicated a bulk-limited R<sub>o</sub>
A value of 722 Ω-cm<sup>2</sup>
. ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm.</s0>
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<s5>03</s5>
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<s5>14</s5>
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<s2>NK</s2>
<s5>15</s5>
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<s5>29</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s4>INC</s4>
<s5>46</s5>
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<fC03 i1="22" i2="X" l="FRE"><s0>GaSb</s0>
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<s4>INC</s4>
<s5>48</s5>
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<fC03 i1="24" i2="X" l="FRE"><s0>ZnS</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>8560D</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>046</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
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Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes

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